A semiconductor wafer for semiconductor components and to a method for its production is disclosed. The devices can be implemented in SiC and can include epitaxially grown n-type drift and p-type trenched gate regions, and an n-type epitaxially regrown channel region on top of the trenched p-gate regions. Alternating current voltages having different phases are applied to the vibrator unit, whereby the vibrator unit generates a vibration wave to generate elliptical rotation vibrations in the driving contacting parts.