Methods of making fins and semiconductor structures containing fins are provided. Further, by performing a plasma nitriding treatment to the bottom insulating film, a nitride region whose nitrogen concentration has a peak value and is 1 atom % or more is formed on the upper surface side in the bottom insulating film. The shielding means preferably includes a retainer ring externally positioned thereon, wherein the retainer ring is configured to engage a corresponding retainer depression in an internal wall of the catheter hub. This invention further relates to the inbred and hybrid genetic complements of plants of variety I181334, and also to the SSR and isozyme typing profiles of corn variety I181334. Also disclosed is a two-step method for producing Mannich bases, by means of which low viscous Mannich bases are obtained. Since the cursor-based GUI is persistent in nature, the plurality of applications, commands and event notifications can be accessed regardless of the user’s computer environment.