A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. Thome Mcintosh,\u2019 originating as a limb mutation of the Malus domestica variety of \u2018Starling\u2019. In one arrangement, load pins are offset vertically from the mid-plane of the plunger a distance sufficient to make it possible to measure differences in top-to-bottom reaction forces imposed on the plunger. The RIP renders the respective small areas with the designated resolutions, and temporarily holds the rendering results in a memory for respective small areas. A diffusionless annealing process is performed on the active areas.