Ferroelectric capacitors are formed over a semiconductor substrate, then, a barrier film directly covering the ferroelectric capacitors is formed. % and a rosinpentaerithritol resin with a softening range of 80\xb0 C. A second plurality of indicia may be located along the horizontal line and may each include two normal sides that are formed normal to the horizontal line and two parallel sides that are formed parallel to the horizontal line. In alternate embodiments, the deployment of the rain cover can be adjusted to allow more or easier access to the clubs.