The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. A graphite crucible provided in the furnace contains an electrolyte formed from a molten salt of a metal halide. The plug shape internally comprises gentle sloping walls rather than surfaces in alignment with the longitudinal axis of the tubular to allow smaller cuttings to be produced that can be caught on a magnetic sub or circulated to the surface. Siliciding includes depositing metal on the gate of the high voltage threshold area and annealing the metal, the metal is deposited either by CVD or sputtering followed by anneal to fully suicide the gate structure of the high voltage threshold area. When an interactivity criterion is satisfied, the interactivity system sends a response to the query indicating that the interactivity criterion is satisfied along with the identity of the entity that satisfies the interactivity criterion. In response to receipt of the memory access request and selection of the first timing, data from the target memory block is transmitted to a requestor prior to completion of error detection processing on the target memory block.