Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing polysilazane having a compound of the formula \u2014n\u2014 wherein n represents a positive integer, a weight average molecular weight within the range of about 3,300 to 3,700 to form a planar SOG layer. Small quantities, on the order of 10 sccm or less, of other gases such as C2HF5 and CF4 may be added. A cylindrical-shaped droplet manifold is positioned over the small-diameter end of the concentrator to create a liquid chamber in the manifold with the vertex inside the liquid chamber. A trench extends through the body region between an active area and an edge of the substrate. The cable is connected to the second plane in parallel with the optical axis of the optical fiber.