Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. This is accomplished by providing a semiconductor substrate having gate oxide formed thereon, and shallow trench isolation and a p-well formed therein. One or more such wax bodies may be assembled with other bodies andor other cores to facilitate a main wax molding of such assembly. The free end of each bar has an attachment mechanism for securing the bars to the respective boats.