An address receiving circuit for a semiconductor apparatus includes a controller that, in response to a semiconductor apparatus initialization-related command, generates a control signal having an activation cycle corresponding to the standard of cycle time of the semiconductor apparatus initialization-related command, and an address buffer that receives an address according to the control signal. The zero current control execution device is configured to control a converter to output a substantially constant raised voltage that is higher than an inductive voltage generated in an electric motor. The cutting means comprises a rotary blade which can turn on the center axis of rotation extending in the second direction and is shaped like an annular thin plate perpendicular to the second direction. The circuitry is configured to execute a process for determining the handwritten characters falling within the gap between the first pair of reference ruled lines as one structure, when the characters included in the image fall within a gap between the first pair of reference ruled lines. 20% at the surface of a desired portion of a shape memory alloy article. Each microstructure is formed with two sidewalls.