A method of fabricating a transistor having shallow source and drain extensions utilizes a self-aligned contact. A plurality of leads end portions are inserted into a plurality of lead holes of an alignment jig. Configuration data corresponding to the service consumer is identified. The outer surface includes a locking section extending from the rim, a composite-curved section extending from the locking section at a first transition point, and a dome section extending from the composite-curved section, wherein at the first transition point, the composite-curved section is tangential to the locking section.