When films of Ru2 are formed on a substrate by means of a thermal CVD method, the films are also deposited on members around the substrate, resulting in the formation of particles on the substrate and hence a reduction in the manufacturing yield. The component to be covered with the molding compound is enclosable by the upper frame part and the lower frame part in such a way that a cavity is formed by the sealing frame and the component. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. The front mouth includes inlets disposed in front of respective cutting edges with reference to the direction of rotation of the body.