Example embodiments of the present invention relate to an electrode structure, a method of manufacturing the electrode structure, a phase-change memory device having the electrode structure and a method of manufacturing the phase-change memory device. The godet roll casing is rotatably seated on a projecting support by a bearing arrangement which includes a radially acting magnetic bearing having a plurality of bearing pole windings distributed in the circumferential direction on the support. Unlike all previous arts, the novel combo nonvolatile memory of the present invention of ROM, EEPROM and FLASH or combination of any two is made of one unified, fully compatible, highly-scalable BN+cell and unified process. Upon encountering a first access to the metadata, such as a first read, access barrier operations, such as logging of the metadata; setting a read monitor; or updating ephemeral filter information with an ephemeralbuffered store operation, are performed. The cracker and the at least one spectrometer, and also all devices and connecting lines between the cracker and the spectrometer, are surrounded by an inert gas. The IR projectors are preferably arranged in a grid pattern and the control module is adapted and configured to flash the IR projectors on in off such that a message can be displayed on the grid pattern.