A method of forming a planar CMOS transistor divides the step of forming the gate layer into a first step of patterning a resist layer with a first portion of the gate layer pattern and then etching the polysilicon with the pattern of the gates. Methods include receipt of a document to be entered into the workflow processing system. After adding water to the first mixture, the second mixture with water is heated until a composition of gel-like consistency has been produced. The beam deflection device scans the illuminating light beam over or through a sample. A traffic control system including a variable speed limit sign and methods of use thereof are also provided.