A memory device that is capable of automatically repairing itself includes a working cell array, a redundancy cell array, a control logic, and a lookup table. The piezoelectric substrate is made to have a thickness that is not thicker than 0. The switch also includes a membrane layer disposed outwardly from the dielectric layer, the membrane layer overlying a support layer, the support layer operable to space the membrane layer outwardly from the dielectric layer. A single-ended radio frequency input terminal is configured to deliver a single-ended RF signal to the first and second input nodes.