A non-volatile memory device includes a plurality of memory cells coupled in series, a plurality of word lines coupled to the respective memory cells, and a plurality of spacers interposed between the word lines and having different dielectric constants according to line widths of the word lines. The method includes ascertaining a shape of a first stroke of the handwritten stroke set and ascertaining one of a location information and a size information pertaining to the first stroke. The precharge system further comprises a bus having a first rail and a second rail, wherein a second voltage is equal to a potential difference between the first rail and the second rail. The pin travels in the angled groove when the upper die assembly is moved in the vertical direction and causes the upper die assembly to move horizontally.