A memory module comprises a stab resistor between a pin and one end of a bus. Divided data items are generated by dividing the measurement data. Mold material is applied to the external periphery of the model. An insulation layer is arranged on the conduction layer and having a opening to expose a part of the conduction layer as a vibration block arranged over the opening chamber. At small voltages the structure operates as a normal transistor, and at higher voltages the structure operates as a memory device. The four-bar pantographic linkage assembly produces pantographic movement of the second support member with the joystick carried by the second support member between an extended position and a retracted position.